New Data and Updates for several III-V (including mixed by E. C. F. da Silva (auth.), U. Rössler (eds.)

By E. C. F. da Silva (auth.), U. Rössler (eds.)

The Landolt-Börnstein subvolume III/44E is the 5th a part of an replace to the prevailing 8 volumes III/41 approximately Semiconductors and includes New facts and Updates for III-V, and II-VI compounds and their combined crystals. every one compound is defined with appreciate to its houses, the corresponding references are provided.

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Extra resources for New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds

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1007/978-3-642-23415-6_36 # Springer-Verlag Berlin Heidelberg 2012 2 GaAs: local density of states Fig. 2 GaAs. (a) Measured (5 x 5 nm2) low –temperature cross-sectional scanning tunneling microscopy topography images of single Mn acceptors located between 2 and 4 atomic layers (AL) underneath the GaAs(110) surface [10Ç]. Corresponding calculated (5 x 5 nm2) cross sectional view of Mn LDOS by the tight-binding method in (b) the absence or in (c) the presence of homogeneously strained Ga(Mn)As unit cell.

1007/978-3-642-23415-6_25 # Springer-Verlag Berlin Heidelberg 2012 2 AlSb, wurtzite modification: Dresselhaus spin-splitting parameters conduction band cubic Dresselhaus spin-splitting parameters* (in eV A3) Physical Property Numerical Values Remarks Ref. 883 empirical pseudopotential calculations including spin-orbit coupling for AlSb in the wurtzite phase 10D ζ3 (Г9c) ζ3 (Г7c) conduction band linear Dresselhaus spin-splitting parameters* (in eV A) Physical Property Numerical Values Remarks Ref.

B 70 (2004) 035212. 6 K to RT, see Fig. 1 [09H]. Fig. 1 GaAs. Electron Landé g-factor as a function of temperature (filled circles) measured by spin-beat spectroscopy [09H]. The lines are theoretical fittings to the experimental data according to different assumptions. : Phys. Rev. B 79 (2009) 193307. 1007/978-3-642-23415-6_29 # Springer-Verlag Berlin Heidelberg 2012 GaAs, wurtzite modification: band structure, energies at symmetry points 1 GaAs, wurtzite modification: band structure, energies at symmetry points Semiconductors - New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds substance: property: gallium arsenide (GaAs), wurtzite modification band structure, energies at symmetry points, (electronic properties) band structure For the band structure of GaAs in the zinc blende and wurtzite phases of GaAs using pseudopotential calculations in the GW approximation, see [07Z].

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