Fundamental Electron Interactions with Plasma Processing by Loucas G. Christophorou, James K. Olthoff

By Loucas G. Christophorou, James K. Olthoff

This quantity bargains with the elemental wisdom and figuring out of basic interactions of low strength electrons with molecules. It professional­ vides an updated and complete account of the elemental in­ teractions of low-energy electrons with molecules of present curiosity in smooth know-how, in particular the semiconductor undefined. the first electron-molecule interplay techniques of elastic and in­ elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are mentioned, and state-of-the­ paintings authoritative facts at the move sections of those tactics in addition to on price and shipping coefficients are supplied. This basic wisdom has been got by way of us over the past 8 years via a serious evaluate and finished evaluation of "all" on hand information on low-energy electron collisions with plasma processing gases which we carried out on the nationwide Institute of criteria and know-how (NIST). information from this paintings have been initially released within the magazine of actual and Chemical Reference information, and feature been up-to-date and extended right here. the basic electron-molecule interplay techniques are mentioned in bankruptcy 1. The move sections and fee coefficients almost always used to explain those interactions are outlined in bankruptcy 2, the place a few fresh advances within the equipment hired for his or her size or calculation are defined. The method we followed for the serious overview, synthesis, and overview of the prevailing info is defined in bankruptcy three. The significantly assessed info and urged or prompt pass sections and expense and delivery coefficients for ten plasma etching gases are offered and mentioned in Chapters four, five, and 6.

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9(a)) and N; (B3ITg) (Fig. 9(b)) as a function of the scattered electron energy (from Ref. [55]). The open circles are the ground-state measurements of Ref. [56] as normalized in Ref. [57]. sections to lower energies, which, along with the higher ionization cross sections of the excited states, affect the rate coefficients of the various discharge processes in such systems. 7c) [21]. An early study of this kind was concerned with the investigation of dissociative electron attachment to singlet oxygen O 2(a 1 b.

13. Under very-low gas pressures where single-collision conditions prevail, electron-molecule interaction processes are considered isolated, that is, the electrons interact with one molecule at a time and the collisions are not influenced by the presence of the other molecules. 13. Schematic illustrations of electron-atom/molecule interactions in low-, high-, and very-high-pressure gases, in clusters, at surfaces, and in condensed matter. the electron-molecule collisions are no longer isolated and they are affected by the nature, density, and state of the medium in which they are embedded.

B) Yield of (0 2 )2" ions from pure O 2 clusters (upper curve) and from 02/N2 clusters (02/N2 ratio 1/10, lower curve). The stagnation pressure was 400 kPa. 3 eV N2"' (2ITg) resonance of N2 in the 02/N2 clusters (data from Ref. [103]). ent negative ions of molecules such as SF 6, c-C4F 8, and C 6 F 6, since these molecules capture thermal and near-thermal-energy electrons with large cross sections forming long-lived (~ 10- 6 s) parent negative ions. , O 2 or cluster negative ions such as (0 2 )2)' Furthermore, the negative ion properties of single molecules or clusters of molecules with strong "zero" or "near-zero" energy nondissociative electron attachment resonances are influenced by inelastic electron scattering processes by the cluster constituents within the cluster.

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