Contacts to Semiconductors - Fundamentals and Technology by Leonard J. Brillson

By Leonard J. Brillson

This booklet bridges the macroscopic, mesoscopic, and atomic-scale regimes of contacts to semiconductors. it's the state of the art in growing to be, processing, and characterizing digital junctions. It contains descriptions of a big selection of strategies starting from complicated ohmic, Schottky and heterojunction contacts to microscopic junctions gleaned from ultrahigh vacuum floor technology suggestions.

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La) for Fib. (The lattice parameters were taken from Ref. 232) 74 Contacts to Semiconductors @Ga 6 Ga CSCI NaCl ErAs CoGa Zincblende GaAs Tetragonal r-MnAl e Mn - Al, Si @ BiFg Fes(AI,Si) Figure 3. Comparison of different crystal structures with potential epitaxial alignment: CoGa structure (CsCI type), z-MnAI (tetragonal), ErAs structure (NaCI type), Fes(AI,Si) structure (BiFstype) and GaAs (zincblende type). Eight unit cells of idealized CoGa (or NiAI) structure and a unit cell of ErAs structure and Fe,(AI,Si) structure occupy approximately the same volume as a single unit cell of GaAs.

Change of the contact resistances of AuGeNi contact during isothermal annealingPI Next Page 26 Contacts to Semiconductors In addition, the edge profiles of the contacts deteriorated due to the melting of f3-AuGa compounds. Lateral diffusion of the contacts was observed in as-prepared AuGeNi contacts. t88)t104] Cross-sectional TEM micrographs at the contact edges are shown in Fig. 12. 19pm (Fig. 12a). The worst case of edge deterioration among ten observed specimens is shown in Fig. 5pm. t105] observed that the contact resistances measured by TLM depended on the angle between the current flow direction and the (110) crystalline direction of the substrate.

5 . (b) 0 200 ANNEALING TEMPERATURE (“C) Figure 7. [sl Ohmic Contacts to GaAs and Other III-V Compounds 21 GaAr Figure 8. Bright-field image of cross-sectional view of AuGeNi contact after annealing at 44OOC for 2 min. 3 Roles of interfacial XRD and TEM Microstructure examinations on pc and Thermal of samples with various suggested that the NiAs(Ge), p-AuGa, and other compounds Stability pC values formed at the interface of the contacts which provide low contact resistances. The roles of each compound are discussed below.

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