Computational Methods for Transient Analysis by T. Belytschko, T.J.R. Hughes

By T. Belytschko, T.J.R. Hughes

During this quantity, the theoretical foundation and implementation of computing device equipment for the temporary research of solids and buildings are defined. whereas emphasis is put on finite point tools, finite distinction and boundary-element tools also are handled. either linear and nonlinear research are thought of however the advancements are restricted to the methodologies of direct time integration. In precis, this booklet brings jointly for the 1st time the theoretical foundation of tools established in brief research.

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By spin coating, the resist was formed on the surface of the substrate and exposed by a focused electron beam. The exposed areas have different solubility in the developer solvent. Hence, the obtained pattern is used as a mask for transferring it to the substrate. The main characteristics of EBL technology are (1) very high resolution, (2) very slow, and (3) expensive and rather complicated. 1 Electron Beam Lithography System A typical EBL system consists of electron gun, lens, and deflector. But in fact, the EBL system is very complicated.

It can accurately mill the specimen down to a submicrometer or even a nanoscale. 42 3 Stamp Fabrication Fig. 7 The steps in the template fabrication process using FIB patterning (a) Form mesa and mold though grinding. (b) Coat mold with 15 nm Cr. (c) Structuring with FIB. (d) Cr etch and mold clean FIB is a very strong tool to fabricate the mold. Besides, the mold with some defects can be repaired by FIB technique. A complex 3D structure such as “motheye” lens quartz mold is fabricated by the use of FIB milling [7].

6 Research Status of Nanoimprint Lithography Fig. Imprint* or ((step same flash) and (imprint* or impress* or lithograph*)) or “nano* press*” or nano*press* or nano*impress* or “nano* impress*”) S2 D ts D (nanopattern* or (nano* same pattern*) or (ultraviolet and lithograph*)) and ts D (imprint* or impress* or (“micro contact print*” or “microcontact print*”)) S3 D au D (chou stephen y or au D chou s y or au D c grant willson or au D willson c g or au D c g willson and ((ti D (imprint* or impress* or pattern* or lithograph*) or “micro contact print*” or “microcontact print*”) or (ip D h01l-021 or ip D g03f-007/00 or ip D b82b-003/00 or ip D b82b-001/00 or ip D g03c-005/00 or ip D g03f-001/00 or ip D g03f-009/00))) S D s1 or s2 or s3 Search period (year):1998–2011 26 2 Principles and Status of Nanoimprint Lithography 7 61 43 32 29 USA 8 14 Japan Korea 434 188 China(mainland) Taiwan EP WO Germany 356 Sweden England Fig.

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